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| BTA225-600BT Three quadrant triacs high commutation Rev. 01 -- 3 March 2005 Product data sheet 1. Product profile 1.1 General description Passivated high commutation triac in a SOT78 (TO-220AB) plastic package. Intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated RMS current at the maximum rated junction temperature, without the aid of a snubber. 1.2 Features s High maximum junction temperature s High commutation capability 1.3 Applications s Motor control s Industrial and domestic heating 1.4 Quick reference data s VDRM 600 V s ITSM 200 A s IT(RMS) 25 A s IGT 50 mA (T2+ G+; T2+ G-; T2- G-) 2. Pinning information Table 1: Pin 1 2 3 mb Pinning Description main terminal 1 (T1) main terminal 2 (T2) gate (G) mounting base, connected to main terminal 2 (T2) 123 03ab54 Simplified outline mb Symbol T2 sym051 T1 G SOT78 (TO-220AB) Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 3. Ordering information Table 2: Ordering information Package Name BTA225-600BT SC-46 Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB Version SOT78 Type number 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDRM IT(RMS) ITSM Parameter repetitive peak off-state voltage RMS on-state current full sine wave; Tmb 116 C; see Figure 4 and 5 Conditions [1] Min - Max 600 25 Unit V A non-repetitive peak on-state current full sine wave; Tj = 25 C prior to surge; see Figure 2 and 3 tp = 20 ms tp = 16.7 ms over any 20 ms period -40 200 220 200 100 2 5 5 0.5 +150 150 A A A2s A/s A V W W C C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj [1] I2t for fusing repetitive rate of rise of on-state current after triggering peak gate current peak gate voltage peak gate power average gate power storage temperature junction temperature t = 10 ms ITM = 30 A; IG = 0.2 A; dIG/dt = 0.2 A/s Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 2 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 40 Ptot (W) 30 001aac222 110 Tmb(max) (C) 120 = 180 C 120 C 90 C 60 C 20 30 C 130 10 140 0 0 5 10 15 20 25 IT(RMS) (A) 150 30 = conduction angle Fig 1. Total power dissipation as a function of RMS on-state current; maximum values 250 ITSM (A) 200 IT tp 001aac224 ITSM time Tj initial = 25 C max 150 100 50 0 1 10 102 n 103 f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 3 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 103 001aac223 ITSM (A) dlT/dt limit 102 IT tp 10 10-5 10-4 10-3 10-2 tp (s) ITSM time 10-1 Tj initial = 25 C max tp 20 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width (tp) for sinusoidal currents; maximum values 80 IT(RMS) (A) 60 20 003aaa805 30 IT(RMS) (A) 116 C 003aaa796 40 10 20 0 10-2 10-1 0 1 10 surge duration (s) -50 0 50 100 150 200 Tmb (C) f = 50 Hz; Tmb 116 C Fig 4. RMS on-state current as a function of surge duration for sinusoidal currents Fig 5. RMS on-state current as a function of mounting base temperature; maximum values 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 4 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 5. Thermal characteristics Table 4: Symbol Rth(j-mb) Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to mounting base thermal resistance from junction to ambient Conditions full cycle half cycle in free air Min Typ 60 Max 1.0 1.4 Unit K/W K/W K/W 10 Zth(j-mb) (K/W) 1 (1) 10-1 001aac229 (2) 10-2 PD tp t 10-3 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10 (1) Unidirectional (2) Bidirectional Fig 6. Transient thermal impedance as a function of pulse width 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 5 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 6. Characteristics Table 5: Characteristics Tj = 25 C unless otherwise specified. Symbol IGT Parameter gate trigger current Conditions VD = 12 V; IT = 0.1 A; see Figure 8 T2+ G+ T2+ G- T2- G- IL latching current VD = 12 V; IGT = 0.1 A; see Figure 10 T2+ G+ T2+ G- T2- G- IH VT VGT holding current on-state voltage gate trigger voltage VD = 12 V; IGT = 0.1 A; see Figure 11 IT = 30 A; see Figure 9 VD = 12 V; IT = 0.1 A; see Figure 7 VD = 400 V; IT = 0.1 A; Tj = 150 C ID off-state leakage current critical rate of rise of off-state voltage critical rate of change of commutating current gate controlled turn-on time VD = VDRM(max); Tj = 150 C 0.25 31 34 30 31 1.3 0.7 0.4 1 60 90 60 60 1.55 1.5 5 mA mA mA mA V V V mA [1] Min Typ Max Unit Static characteristics 2 2 2 18 21 34 50 50 50 mA mA mA Dynamic characteristics dVD/dt VDM = 67 % VDRM(max); Tj = 150 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 150 C; IT(RMS) = 25 A; without snubber; gate open circuit; see Figure 12 ITM = 30 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 1000 4000 V/s dIcom/dt 9 20 - A/ms tgt - 2 - s [1] Device does not trigger in the T2-, G+ quadrant. 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 6 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 1.6 VGT(Tj) VGT(25C) 1.2 001aac225 3 IGT(Tj) IGT(25C) (1) 001aac226 2 (2) (3) 0.8 1 0.4 -50 0 50 100 Tj (C) 150 0 -50 0 50 100 Tj (C) 150 (1) T2- G- (2) T2+ G- (3) T2+ G+ Fig 7. Normalized gate trigger voltage as a function of junction temperature 001aac227 Fig 8. Normalized gate trigger current as a function of junction temperature 3 IL(Tj) IL(25C) 2 001aac228 80 IT (A) 60 40 1 20 (1) (2) (3) 0 0 1 2 VT (V) 3 0 -50 0 50 100 Tj (C) 150 VO = 1.073 V RS = 0.015 (1) Tj = 150 C; typical values (2) Tj = 150 C; maximum values (3) Tj = 25 C; maximum values Fig 9. On-state current characteristics Fig 10. Normalized latching current as a function of junction temperature 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 7 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 3 IH(Tj) IH(25C) 2 001aac230 103 dIcom/dt (A/ms) 102 001aac231 1 10 0 -50 1 0 50 100 Tj (C) 150 0 40 80 120 160 Tj (C) Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of change of commutating current as a function of junction temperature; typical values 7. Package information Refer to mounting instructions for SOT78 (TO-220AB) package. Epoxy meets requirements of UL94 V-0 at 18 inch. 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 8 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E p A A1 q D1 mounting base D L1(1) L2 Q L b1 1 2 3 b c e e 0 5 scale 10 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.6 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB JEITA SC-46 EUROPEAN PROJECTION ISSUE DATE 01-02-16 03-01-22 Fig 13. Package outline SOT78 (TO-220AB) 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 9 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 9. Revision history Table 6: Revision history Release date 20050303 Data sheet status Product data sheet Change notice Doc. number 9397 750 14379 Supersedes Document ID BTA225-600BT_1 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 10 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 10. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 12. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 13. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 14379 (c) Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 -- 3 March 2005 11 of 12 Philips Semiconductors BTA225-600BT Three quadrant triacs high commutation 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package information . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information . . . . . . . . . . . . . . . . . . . . 11 (c) Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 3 March 2005 Document number: 9397 750 14379 Published in The Netherlands |
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